Télécharger le livre :  Modeling of AlGaN/GaN High Electron Mobility Transistors
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This volume focuses on GaN HEMT, the most promising transistor technology for RF power applications such as 5G communications, space and defense. The contents include accurate small signal models required to predict the RF power performance of RF electronic circuits,...

Editeur : Springer
Parution : 2024-12-23
Collection : Springer Tracts in Electrical and Electronics Engineering
PDF, ePub

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