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Vibrational Properties of Defective Oxides and 2D Nanolattices
Emilio Scalise
Ge and III–V compounds, semiconductors with high carrier mobilities, are candidates to replace Si as the channel in MOS devices. 2D materials – like graphene and MoS_2 – are also envisioned to replace Si in the future.This thesis is devoted to the first-principles...

Editeur : Springer
Parution : 2014-05-28
Collection : Springer Theses
ePub

94,94 €